| 摘要 |
PROBLEM TO BE SOLVED: To achieve a minute semiconductor device having a short channel length while preventing a short channel effect. SOLUTION: An impurity region 104 having a linear pattern shape is formed in parallel to a channel direction (electric field direction) for a channel forming region 103. This impurity region 104 suppresses the spread of a drain side depletion layer, and causes a narrow channel effect to prevent the short channel effect. In the channel forming region 103, the impurity region 104 defines the movement paths of carriers in one direction with respect to energy, thereby preventing dispersion due to irregular collision of the carriers. COPYRIGHT: (C)2007,JPO&INPIT
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