| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device for preventing an erroneous write or erroneous erase with respect to a nonvolatile memory caused by an unexpected unstable state of a system or erroneous operation. <P>SOLUTION: The nonvolatile semiconductor memory device is provided with a voltage detection means for detecting the voltage of a high voltage source which performs the write or erase of the nonvolatile memory and also provided with a prohibiting means for prohibiting a control of the write or erase by a write/erase control means when the voltage detection means detects that the voltage of the high voltage source is a predetermined voltage or lower. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
