| 摘要 |
PROBLEM TO BE SOLVED: To provide a ferroelectric memory excellent in operation characteristics in low voltage drive. SOLUTION: The ferroelectric memory includes a memory cell MC having a ferroelectric capacitor Cf. When application voltage is assumed to be Vapp between both electrodes of a ferroelectric capacitor Cf and counter voltage of the ferroelectric capacitor Cf is assumed to be Vc, Vc/Vapp is 0.4 or more and 0.8 or less. COPYRIGHT: (C)2007,JPO&INPIT
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