| 摘要 |
PROBLEM TO BE SOLVED: To provide a single crystal semiconductor manufacturing method by which dislocation induction due to a sharp increase of the crystal diameter after a seed crystal is brought into contact with a melt is prevented by suppressing the variation in the temperature of the melt when a single crystal is pulled with no dislocation without performing a necking process while using an impurity-added seed crystal, and the crystal is prevented from being thinned below a crystal diameter durable against the load. SOLUTION: By applying a magnetic field to the melt before the seed crystal is brought into contact with the melt, the variation in the temperature of the melt is suppressed when the single crystal starts to be pulled up, thereby preventing the crystal diameter from sharply increasing or decreasing. COPYRIGHT: (C)2007,JPO&INPIT
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