APPARATUS FOR FORMING TRANSITION METAL OXIDE FILM, METHOD OF MANUFACTURING NONVOLATILE MEMORY DEVICE USING SAID APPARATUS, NONVOLATILE MEMORY DEVICE MANUFACTURED BY SAID METHOD

摘要

PROBLEM TO BE SOLVED: To provide an apparatus for forming a transition metal oxide film, a method of manufacturing a nonvolatile memory device using the apparatus, and a nonvolatile memory device manufactured by the method.

SOLUTION: An apparatus for forming a transition metal oxide film, a method of manufacturing a nonvolatile memory device, and a nonvolatile memory device manufactured by the method are provided. The apparatus for forming a transition metal oxide film comprises: a chamber; a substrate which is placed in the chamber, and on which a transition metal oxide film is formed; a target which is placed in the chamber and discharges transition metal particles that are a first source material of the transition metal oxide film toward the substrate; and an oxygen ion gun which accelerates oxygen ions that are a second source material of the transition metal oxide film and radiates the accelerated oxygen ions toward the substrate. The method of manufacturing a nonvolatile memory device comprises: a step of discharging transition metal particles from the target; a step of accelerating oxygen ions and radiating them toward the substrate with the oxygen ion gun; and a step of reacting the transition metal particles and the oxygen ions on the substrate to deposit a resultant transition metal oxide film on the substrate.

COPYRIGHT: (C)2007,JPO&INPIT