发明名称 |
METHOD OF FORMING CURVED SURFACE |
摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming curved surface capable of easily forming a curved surface which is optionally shaped and is smooth. SOLUTION: The method of forming the curved surface 2 of a semiconductor lens 1 (Fig. 1(e)) by removing a part of a semiconductor substrate 10 (Fig. 1(a)) made of p-type silicon substrate comprises: an anode formation process of forming an anode 12 (Fig. 1(c)) on which a pattern is designed in accordance with a desired curved surface (shape of the curved surface 2), so as to make an ohmic contact with the semiconductor substrate 10 on one surface side of the semiconductor substrate 10; an anodization process of forming a porous part 14 (Fig. 1(d)) made of porous silicon as a part to be removed on the other surface side of the semiconductor substrate 10 by applying an electric current between a cathode oppositely arranged on the other surface side of the semiconductor substrate 10 in an electrolyte solution of dissolving an oxide of a constitutional element of the semiconductor substrate 10 and the anode 12; and a porous part removal process of removing the porous part 14. COPYRIGHT: (C)2007,JPO&INPIT
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申请公布号 |
JP2007226198(A) |
申请公布日期 |
2007.09.06 |
申请号 |
JP20060334967 |
申请日期 |
2006.12.12 |
申请人 |
MATSUSHITA ELECTRIC WORKS LTD |
发明人 |
HONDA YOSHIAKI;NISHIKAWA NAOYUKI |
分类号 |
G02B3/00;C25D11/00;C25D11/32 |
主分类号 |
G02B3/00 |
代理机构 |
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