发明名称 GAIN-COUPLED DISTRIBUTED FEEDBACK SEMICONDUCTOR LASER
摘要 PROBLEM TO BE SOLVED: To improve a single-mode yield and obtain a high output efficiency on a side of a front end surface in a gain-coupled distributed feedback semiconductor laser. SOLUTION: Asymmetric coating is applied to the gain-coupled distributed feedback semiconductor laser; wherein a front end surface 13 for emitting laser light is covered with a coating with low reflectivity, and a rear end surface 15 is covered with a coating with high reflectivity. Further, an absorbing diffraction grating 10 is provided along an optical waveguide, and a phase shift structure 11 is provided on the diffraction grating. The mentioned structure can improve the single-mode yield of an oscillation wavelength, and can improve output efficiency on the side of the front end surface 13. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007227560(A) 申请公布日期 2007.09.06
申请号 JP20060045726 申请日期 2006.02.22
申请人 MITSUBISHI ELECTRIC CORP 发明人 TAKAGI KAZUHISA;MATSUMOTO KEISUKE
分类号 H01S5/12 主分类号 H01S5/12
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