| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser for improving an anti-surge voltage by controlling breakdown of a rear end surface, and to provide a method for manufacturing the semiconductor laser. SOLUTION: A laser resonator 10 is formed between a first end surface 10F and a second end surface 10R. A light absorption control region 40 is provided in the side of the second end surface 10R in the opposite side of the first end surface 10F to emit the light. The light absorption control region 40 is provided to control absorption of the light generated by an active layer with a-Si forming a second reflecting mirror film 30R of the second end surface 10R. This region 40 is formed with addition of an impurity such as boron (B), silicon (Si), or zinc (Zn). Among these impurities, boron (B) is preferable. Even when the second reflecting mirror film 30R is formed of a-Si that can absorb the light generated from the active layer, breakdown of the second end surface 10R can be controlled because influence of light absorption is alleviated. COPYRIGHT: (C)2007,JPO&INPIT
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