摘要 |
The invention provides a dry etching method for performing a wiring process on a semiconductor substrate using a plasma etching apparatus, wherein the wiring process is performed without causing disconnection or deflection of the wiring. The invention provides a dry etching method for performing a wiring process on a semiconductor substrate using a plasma etching apparatus, wherein during a step for etching a material 12 to be etched using a mask pattern composed of a photoresist 15 and inorganic films 14 and 13 made of SiN, SiON, SiO and the like formed on the material 12 to be etched, a mixed gas formed of a halogen-based gas such as chlorine-containing gas or bromine-containing gas and at least one fluorine-containing gas selected from a group of fluorine-containing gases composed of CF<SUB>4</SUB>, CHF<SUB>3</SUB>, SF<SUB>6 </SUB>and NF<SUB>3 </SUB>is used to reduce the mask pattern and the processing dimension of the material to be etched substantially equally during processing of the material 12 to be etched.
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