| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device with high yield, high productivity, high operative performance, and high reliability. <P>SOLUTION: The semiconductor device 1 comprises a semiconductor chip 3, a source electrode 3a formed on the semiconductor chip 3 and electrically connected to a lead frame 4, and a gate electrode 3b. Being laser-welded to a thin film-shaped connection 4a formed at the end of the lead frame 4, the electrode 3a is electrically connected to the lead frame 4. <P>COPYRIGHT: (C)2007,JPO&INPIT |
