| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of forming a thin film structure having weak tensile stress controlled in mechanical stress and making an electrical continuity. <P>SOLUTION: After formation of lower layer film 35 of polysilicon film on the substrate 32 of Si etc., the lower layer film 35 is doped with impurity such as P and thermally diffused so as to make continuity. Then, on the lower layer film 35, the upper layer film 36 of polysilicon film which is only formed and not yet makes an electrical continuity, is formed. The upper layer film 36 is provided with tensile stress comparable with compressive stress of the lower layer film 35, and the thin film structure A composed of the lower layer film 35 and the upper layer film 36 is regulated so as to have a weak tensile stress as a whole. <P>COPYRIGHT: (C)2007,JPO&INPIT |
