| 摘要 |
PROBLEM TO BE SOLVED: To provide a transistor having a broad band gap designed for a millimetric wave operation. SOLUTION: The field effect transistor comprises: a group III nitride channel layer; a spacer layer on the group III nitride channel layer; a gate contact point on the group III nitride channel layer, which has sufficient gate length for modulating conductivity of a channel layer corresponding to a voltage applied in a frequency exceeding 30GHz; a lower field plate which is electrically connected to the gate contact point, and extends at least by about 0.1μm in a direction heading for the drain contact point by crossing over the spacer layer; and a source contact point and a drain contact point on the group III nitride channel layer. The transistor exhibits power density larger than about 5 W/mm during operation in a frequency of at least 30GHz. COPYRIGHT: (C)2007,JPO&INPIT |
