| 摘要 |
PROBLEM TO BE SOLVED: To provide a memory controller for effectively performing the operation of writing on a semiconductor storage device by achieving delay control in a flexible manner even if an operating clock frequency varies. SOLUTION: The memory controller 100 for writing data in a semiconductor storage device 50 has a clock generating circuit 11 for generating a plurality of clock signals; a light strobe control circuit 12 for controlling the strobe signals imparted to the semiconductor storage device 50; and a write data buffer 13 for temporarily writing data to be provided to the semiconductor storage device 50. The clock generating circuit 11 generates a first clock synchronized with an external clock, a second and a fourth clock each obtained by doubling the external clock, and a third clock whose phase is inverse to that of the second clock. The light strobe control circuit 12 and the write data buffer 13, both of which operate in synchronism with the second block, output the strobe signals in synchronism with the third clock and output the data in synchronism with the fourth clock, respectively. COPYRIGHT: (C)2007,JPO&INPIT
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