发明名称 Bond pad structure for wire bonding
摘要 A bond pad structure of an integrated circuit is provided. The bond pad structure includes a conductive bond pad, a first dielectric layer underlying the bond pad, and an M<SUB>top </SUB>plate located in the first dielectric layer and underlying the bond pad. The M<SUB>top </SUB>plate is a solid conductive plate and is electrically coupled to the bond pad. The bond pad structure further includes a first passivation layer over the first dielectric layer wherein the first passivation layer has at least a portion under a middle portion of the bond pad. At least part of an active circuit is located under the bond pad.
申请公布号 US2007205508(A1) 申请公布日期 2007.09.06
申请号 US20060409297 申请日期 2006.04.21
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 HSIA CHIN-CHIU;YAO CHIH-HSIANG;HUANG TAI-CHUN;PENG CHIH-TANG
分类号 H01L23/48 主分类号 H01L23/48
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