发明名称 NAND FLASH MEMORY DEVICE
摘要 A NAND flash memory device is provided to read out required data without finishing all programs of numerous data, by comprising a control circuit preventing a collision between data to be programmed and data for a read operation. A NAND flash memory device includes a plurality of planes and a plurality of page buffer blocks corresponding to the respective planes. An input/output buffer circuit transfers/receives data to/from the page buffer blocks. A control circuit controls the page buffer blocks and the input/output buffer circuit. The control circuit controls the page buffer blocks and the input/output buffer circuit in order to prevent data read out from the second plane ending a read operation while data is written into the first plane from colliding with data loaded on the third plane in the input/output buffer circuit.
申请公布号 KR20070090376(A) 申请公布日期 2007.09.06
申请号 KR20060020024 申请日期 2006.03.02
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KWON, JIN HYOUNG
分类号 G11C16/06 主分类号 G11C16/06
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