PHOTORESIST COMPOSITION FOR DEEP UV AND PROCESS THEREOF
摘要
The present invention relates to a novel chemically amplified photoresist, which is sensitive to wavelengths between 300 nm and 100 nm, and comprises a) a novel polymer comprising a sulfone group pendant from a polymer backbone that is insoluble in an aqueous alkaline solution and comprises at least one acidic moiety protected with acid labile group, and b) a compound capable of producing an acid upon irradiation. The invention also relates to a process of imaging the novel positive photoresist composition.
申请公布号
EP1828843(A1)
申请公布日期
2007.09.05
申请号
EP20050808458
申请日期
2005.11.21
申请人
AZ ELECTRONIC MATERIALS USA CORP.
发明人
HOULIHAN, FRANCIS, M.;DAMMEL, RALPH, R.;ROMANO, ANDREW, R.;PADMANABAN, MUNIRATHNA;RAHMAN, DALIL, M.