| 摘要 |
PROBLEM TO BE SOLVED: To provide a new nonvolatile memory capable of directly incorporating optical information to store and read it. SOLUTION: There are a semiconductor layer 12, a ferroelectric layer 13, and an optical conductive layer 14 laminated sequentially on a predetermined substrate 11. There are a source electrode 15 and a drain electrode 16 provided on the semiconductor layer 12 such that the central portions thereof extend to the downside of the ferroelectric layer 13, and further there is a gate electrode 17 provided on the optical conductive layer 14. The ferroelectric layer 13 and the optical conductive layer 14 constitute a gate electrode of the nonvolatile optical memory 10, and the semiconductor layer 12 constitutes a channel of the nonvolatile optical memory 10. COPYRIGHT: (C)2004,JPO&NCIPI |
