| 发明名称 |
AMORPHOUS OXIDE AND FIELD EFFECT TRANSISTOR |
| 摘要 |
A novel amorphous oxide applicable, for example, to an active layer of a TFT is provided. The amorphous oxide comprises microcrystals. |
| 申请公布号 |
KR20070090182(A) |
申请公布日期 |
2007.09.05 |
| 申请号 |
KR20077012791 |
申请日期 |
2005.11.09 |
| 申请人 |
CANON KABUSHIKI KAISHA;TOKYO INSTITUTE OF TECHNOLOGY |
发明人 |
SANO MASAFUMI;NAKAGAWA KATSUMI;HOSONO HIDEO;KAMIYA TOSHIO;NOMURA KENJI |
| 分类号 |
H01L29/786 |
主分类号 |
H01L29/786 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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