| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device in which pattern conversion difference caused by the density of the device pattern formed on a semiconductor substrate is reduced. SOLUTION: The method of manufacturing the semiconductor device comprises the steps of forming a pattern of a second film so as to have a dense area and a nondense area on a first film formed on the semiconductor substrate, forming a third film having an etching rate faster than those of the first and second films, performing first etching to remove the third film in the nondense area and selectively remove the third film in the dense area to a certain depth simultaneously, selectively removing the surface of the second film by using the residual third film, in the dense area as a mask, removing the third film that is residual in the dense area after the first etching process, and performing second etching to etch the first film by using the second film as a mask. A semiconductor device is provided by using the method described above. |
