Sputtering target and antiferromagnetic film and magneto-resistance effect element formed by using the same

摘要

A magneto-resistance effect element comprising:
a ferromagnetic material film (6), and
an anti-ferromagnetic material film (3) stacked with the ferromagnetic material film and having a thickness thicker than that of the ferromagnetic material film,
wherein the anti-ferromagnetic material film is formed by sputtering a sputtering target consisting essentially of Mn and at least one kind of R element selected from a group of Ni, Pd, Pt, Co, Rh, Ir, V, Nb, Ta, Cu, Ag, Au, Ru, Os, Cr, Mo, W, and Re, and comprising at least one member selected from a group of an alloy phase and a compound phase formed between the R element and Mn at least as a part of target texture, and oxygen content of the sputtering target is 1 weigth % or less (including 0).