| 摘要 |
A polishing composition is provided to polish the surface of an interlayer insulating layer and a metal wiring of a semiconductor device without the generation of mu-scratch. A polishing composition comprises 30-99 wt% of deionized water; 0.1-50 wt% of a metal oxide fine powder; and 0.01-10 wt% of a glycol. Preferably the glycol is at least one selected from the group consisting of ethylene glycol, diethylene glycol, triethylene glycol, polyethylene glycol, propylene glycol, dipropylene glycol, tripropylene glycol, and polypropylene glycol; and the metal oxide is at least one selected from the group consisting of silica, alumina, ceria, zirconia, and titania, and has an average particle size of 10-100 nm.
|
