SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

A semiconductor device is provided to reduce the force of atoms hindering the movement of electrons through a transistor by forming strain silicon under a gate electrode wherein an interval between silicon atoms is broad in the strain silicon. A buffer layer(2) is formed on a semiconductor substrate(1). An oxide layer(4) is formed on the buffer layer. A first epitaxial layer(3) is formed on the oxide layer. A second epitaxial layer(5) is formed on the first epitaxial layer. A gate insulation layer(7) is formed on the second epitaxial layer. A gate electrode(8) is formed on the gate insulation layer. The buffer layer can be made of silicon germanium. The second epitaxial layer can be made of strain silicon.