cmos transistor junction region formed by a cvd etching and deposition sequence,申请号GB20070014625-传众专利搜索

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发明名称	cmos transistor junction region formed by a cvd etching and deposition sequence
摘要
申请公布号	GB0714625(D0)	申请公布日期	2007.09.05
申请号	GB20070014625	申请日期	2006.01.04
申请人	INTEL CORPORATION	发明人
分类号		主分类号
代理机构		代理人
主权项
地址

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