发明名称 |
PROGRAMMABLE PHASE-CHANGE MEMORY AND METHOD THEREFOR |
摘要 |
<p>A non-volatile memory is disclosed. A contiguous layer of phase change material (21; 31; 61; 71; 81) is provided. Proximate the contiguous layer of phase change material (21; 31; 61; 71; 81) is provided a first pair of contacts (22; 32; 62; 72; 82) for providing an electrical current therebetween, the electrical current for passing through the contiguous layer of phase change material (21; 31; 61; 71; 81) for inducing heating thereof within a first region. Also adjacent the contiguous layer is provided a second pair of contacts (22; 32; 62; 72; 82) disposed for providing an electrical current therebetween, the electrical current for passing through the contiguous layer of phase change material (21; 31; 61; 71; 81) for inducing heating thereof within a second region thereof, the second region different from the first region. This pairs of contacts may be disposed on the same side or on opposing sides of the phase change material layer.</p> |
申请公布号 |
EP1829110(A2) |
申请公布日期 |
2007.09.05 |
申请号 |
EP20050850858 |
申请日期 |
2005.12.09 |
申请人 |
KONINKLIJKE PHILIPS ELECTRONICS N.V. |
发明人 |
BOEVE, HANS;LAMBERT, NIEK;VAN ACHT, VICTOR;ATTENBOROUGH, KAREN |
分类号 |
H01L27/24 |
主分类号 |
H01L27/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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