| 摘要 |
<p>A power semiconductor module comprises a substrate (5) having an insulation body (52) and conductor tracks (54); at least two power semiconductor components (60) disposed on substrate; at least two conductive load terminals (40-44), each having contact element(s), a flat portion, contact feet (400, 420, 440) and control terminals; and an elastic intermediate layer (46, 47) disposed between adjacent load terminals in the region of their respective flat portions. A pressure device exerts pressure on a stack formed by load terminals and intermediate layer. A power semiconductor module comprises a substrate, at least two power semiconductor components, a housing (3), at least two conductive load terminals, and an elastic intermediate layer. The substrate has an insulation body and conductor tracks disposed on a first main face that is oriented toward the interior of power semiconductor module. The power semiconductor components are disposed on the substrate and electrically connected to the conductor tracks. The housing forms a portion of the power semiconductor module exterior. Each load terminal has contact element(s), a flat portion disposed parallel to and spaced from the first main face of substrate, contact feet extending from the flat portion and contacting the substrate, and control terminals leading to the exterior of power semiconductor module. The elastic intermediate layer is disposed between at least one pair of adjacent load terminals in the region of respective flat portions. The load terminals and elastic intermediate layer form a stack. A pressure device exerts pressure on the stack to maintain the stack in a desired position in the housing. An independent claim is included for a method of producing a power semiconductor module.</p> |
