| 摘要 |
A method for fabricating a flash memory device is provided to form accurately a control gate line of an edge cell adjacent to a source contact by forming vertically a connecting portion on lateral ends of a source active region. A control gate line(40) corresponding to a source contact(52) of a common source line(50) formed in a source active region(20a) is formed outward to the common source line, and the control gate line in a cell region is formed inward to the common source line. A connecting portion formed on lateral ends of the source active region portion for connecting control gate lines is vertically formed to have a specific angle of 70 to 95 degrees. |
