METHOD FOR MANUFACTURING INDUCTOR OF SEMICONDUCTOR DEVICE

摘要

A method for manufacturing inductor of a semiconductor device is provided to reduce the generation of etching residues formed on a via hole and a trench sidewall by separating a dry etching process for forming the via hole and a trench. A lower wire(104) of an inductor is formed on a lower structure(100) of a semiconductor substrate. A first etch stop layer(106) and a second interlayer dielectric(108) are sequentially formed on an upper surface of a first interlayer dielectric(102) having the lower wire. Parts of the second interlayer dielectric and the first etch stop layer are selectively etched to form a via hole. A gap-fill layer(112) gap-fills the via hole. A second etch stop layer(114) and a third interlayer dielectric(116) are sequentially formed on the whole surface of the second interlayer dielectric and the gap-fill layer. Parts of the third interlayer dielectric and the second etch stop layer are selectively etched to form a trench(118) defining an upper wire region of the inductor. The gap-fill layer in the via hole is removed.