发明名称 Voltage level conversion circuit
摘要 A voltage level conversion circuit for converting a voltage level of a low voltage system input signal into a voltage level of a high voltage system signal comprises a latch circuit comprising plural high-breakdown-voltage MOS transistors having a high power supply voltage as a breakdown voltage, a first high-breakdown-voltage N channel MOS transistor which discharges one of the latch nodes of the latch circuit, and a second high-breakdown-voltage N channel MOS transistor which discharges the other latch node, and a pulse signal obtained by boosting a low voltage system pulse signal is applied to a gate of the first or second high-breakdown voltage N channel MOS transistor when the input signal transits.
申请公布号 US7265583(B2) 申请公布日期 2007.09.04
申请号 US20050175450 申请日期 2005.07.07
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 HIRANO HIROSHIGE
分类号 H03K19/82 主分类号 H03K19/82
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