VERTICAL NITRIDE BASED SEMICONDUCTOR LIGHT EMITTING DEVICE HAVING IMPROVED LIGHT EXTRACTION EFFICIENCY

摘要

A vertical nitride based semiconductor light emitting device is provided to improve light extraction efficiency by converting light path from a downward direction into an upward direction through a recessed pattern. A first conductive nitride semiconductor layer(54) is formed on a conductive substrate(51) having light transmittance. An active layer(55) is formed on the first conductive nitride semiconductor layer. A second conductive nitride semiconductor layer(56) having a recessed pattern(P) is formed on the active layer. A high-reflective ohmic contact layer(59b) is formed on an upper surface of the second conductive nitride semiconductor layer.