| 摘要 |
A method for forming a silicon nitride through PECVD is provided to set a deposition time needed to deposit the silicon nitride on a wafer by correcting the deposition time. A preliminary coating of silicon nitride is performed in a PECVD chamber to form a protection layer(S400). A wafer is inserted into the PECVD chamber to deposit the silicon nitride layer on the wafer(S402). A deposition time of the silicon nitride layer in the PECVD is corrected to maintain constantly a thickness of the silicon nitride layer formed on the wafer. After the silicon nitride layer is deposited on the wafer, the chamber is cleaned with RF plasma(S404).
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