| 摘要 |
A solid-state image sensor has a chip-size package, which can be easily fabricated. The element-formation regions are formed in the semiconductor substrate ( 21 ) of the light-receiving element layer ( 20 ) corresponding to the pixel regions. The semiconductor light-receiving elements (PD) are formed in the respective element-formation regions and covered with the light-transmissive insulator films ( 25 a), ( 25 b) and ( 26 ). The light-introducing layer ( 40 ), which includes the light-introducing cavity ( 42 ) and the quartz cap ( 51 ) for closing the cavity, is formed on the film ( 26 ). The microlenses ( 43 ) are incorporated into the cavity ( 42 ). The electric output signals of the semiconductor light-receiving elements (PD) are taken out to the bottom of the substrate ( 21 ) by way of the buried interconnections of the substrate ( 21 ) and then, derived to the outside of the image sensor by way of the output layer ( 10 ) or the interposer ( 10 A).
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