发明名称 |
Method of fabricating silicon on glass via layer transfer |
摘要 |
A method of fabricating a silicon-on-glass layer via layer transfer includes depositing a layer of SiGe on a silicon substrate; relaxing the SiGe layer; depositing a layer of silicon on the relaxed SiGe layer; implanting hydrogen ions in a second hydrogen implantation step to facilitate splitting of the wafer; bonding a glass substrate to the strained silicon layer to form a composite wafer; splitting the composite wafer to provide a split wafer; and processing the split wafer to prepare it for subsequent device fabrication.
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申请公布号 |
US7265030(B2) |
申请公布日期 |
2007.09.04 |
申请号 |
US20040894685 |
申请日期 |
2004.07.20 |
申请人 |
SHARP LABORATORIES OF AMERICA, INC. |
发明人 |
MAA JER-SHEN;LEE JONG-JAN;TWEET DOUGLAS J.;HSU SHENG TENG |
分类号 |
H01L21/46 |
主分类号 |
H01L21/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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