发明名称 |
Methods of forming alternating phase shift masks having improved phase-shift tolerance |
摘要 |
Methods for fabricating alternating phase shift masks or reticles used in semiconductor optical lithography systems. The methods generally include forming a layer of phase shift mask material on a handle substrate and patterning the layer to define recessed phase shift windows. The patterned layer is transferred from the handle wafer to a mask blank. The depth of the phase shift windows is determined by the thickness of the layer of phase shift mask material and is independent of the patterning process. In particular, the depth of the phase shift windows is not dependent upon the etch rate uniformity of an etch process across a surface of a mask blank.
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申请公布号 |
US7264415(B2) |
申请公布日期 |
2007.09.04 |
申请号 |
US20040798908 |
申请日期 |
2004.03.11 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
FURUKAWA TOSHIHARU;HAKEY MARK CHARLES;HOLMES STEVEN JOHN;HORAK DAVID VACLAV;KOBURGER, III CHARLES WILLIAM;MITCHELL PETER H.;NESBIT LARRY ALAN |
分类号 |
G03F1/00;G03C5/00;G03F9/00 |
主分类号 |
G03F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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