GATE STRUCTURE AND METHOD OF FORMING THE SAME, NON-VOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A gate structure, a forming method thereof, a non-volatile memory device and a method for fabricating the non-volatile memory device are provided to make a gate electrode have a stable and uniform resistance value by growing the grain of the gate electrode. A charge trap insulator pattern is formed on a semiconductor substrate. The charge trap insulator pattern has a multi-layered structure consisting of a tunnel oxide layer pattern, a silicon nitride layer pattern(114a) and a blocking insulating layer pattern(116a). A conductive layer pattern(130a) comprising metal nitride is formed on the charge trap insulator pattern. An ohmic layer pattern(140a) comprising metal silicide is formed on the conductive layer pattern, and a gate electrode(150a) is formed on the ohmic layer pattern.