发明名称 |
Thin film transistor array panel and manufacturing method thereof |
摘要 |
A method of manufacturing a thin film transistor array panel is provided, the method includes: forming a gate line on an insulating substrate; forming a gate insulating layer; forming a semiconductor layer; forming a data conductive layer including a data line and a drain electrode; depositing a passivation layer; forming a photoresist including a first portion located on an end portion of the gate line, a second portion thicker than the first portion and located on the drain electrode, and a third portion thicker than the second portion; exposing a portion of the passivation layer under the second portion of the photoresist and a portion of the gate insulating layer under the first portion of the photoresist by etching using the photoresist as an etch mask; forming first and second contact holes exposing the drain electrode and the end portions of the gate line, respectively; and forming a pixel electrode connected to the drain electrode through the first contact hole. |
申请公布号 |
US7265799(B2) |
申请公布日期 |
2007.09.04 |
申请号 |
US20040759389 |
申请日期 |
2004.01.16 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD |
发明人 |
SOUK JUN-HYUNG;LEE JEONG-YOUNG;YOON JONG-SOO;CHOI KWON-YOUNG;BAEK BUM-KI |
分类号 |
G02F1/136;G02F1/1368;G02F1/1362;H01L21/28;H01L21/336;H01L21/768;H01L29/04;H01L29/786 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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