METHOD FOR FORMING METAL LINE OF SEMICONDUCTOR DEVICE

摘要

A method for forming a metal wire of a semiconductor device is provided to remove ring defect by introducing a hard masking method to disconnect an uppermost metal layer and photoresist, directly. A barrier metal layer(101) is formed on a semiconductor substrate. An uppermost metal layer(103) is formed on an upper portion of a barrier metal layer. An anti-reflective coating(105) is formed on an upper portion of the uppermost metal layer. A hard mask layer(107) is formed on an upper portion of the anti-reflective layer. The hard mask is patterned. The anti-reflective layer and the uppermost metal layer are sequentially patterned through etching using the patterned hard mask layer as a mask to form an uppermost metal wire. The structure forming the uppermost metal wire is gap-filled by using an insulating material to form an interlayer dielectric. The interlayer dielectric is planarized.