| 摘要 |
A semiconductor apparatus wherein a device formed on a semiconductor substrate comprises a gate insulating film including a high dielectric constant film formed on the substrate and an anti-reaction film formed on the high dielectric constant film, and a gate electrode formed on the anti-reaction film, the high dielectric constant film comprises a film containing at least one of Hf and Zr, and Si and O, or a film containing at least one of Hf and Zr, and Si, O and N, the anti-reaction film comprises an SiO<SUB>2 </SUB>film, a film containing SiO<SUB>2 </SUB>as a main component and at least one of Hf and Zr, a film containing SiO<SUB>2 </SUB>as a main component and N, a film containing SiO<SUB>2 </SUB>as a main component, Hf and N, a film containing SiO<SUB>2 </SUB>as a main component, Zr and N, or a film containing SiO<SUB>2 </SUB>as a main component, Hf, Zr and N.
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