发明名称 |
Method and structure for composite trench fill |
摘要 |
A method and structure for a composite trench fill for silicon electronic devices. On a planar silicon substrate having a first deposited layer of oxide and a second deposited layer of polysilicon, a trench is etched. Deposition and etch processes using a combination of oxide and polysilicon are used to fabricate a composite trench fill. The trench bottom and a lower portion of the walls are covered with oxide. The remaining portion of the trench volume is filled with polysilicon. The method may be used for junction field effect transistors (JFETs) and metal oxide semiconductor field effect transistors (MOSFETs).
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申请公布号 |
US7265398(B1) |
申请公布日期 |
2007.09.04 |
申请号 |
US20040816980 |
申请日期 |
2004.04.02 |
申请人 |
QSPEED SEMICONDUCTOR INC. |
发明人 |
YU HO-YUAN |
分类号 |
H01L29/80;H01L21/763;H01L27/098;H01L31/112 |
主分类号 |
H01L29/80 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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