| 摘要 |
A sense amplifier circuit in a FeRAM and a driving method thereof are provided to improve speed of reading data of a cell or writing data into a cell by sensing a voltage of the cell through under-drive and over-drive. Bit lines are connected to a FeRAM cell array. A sense amplifier comprises a pull-down device of an NMOS transistor and a pull-up device of a PMOS transistor, and performs data exchange between the bit lines. A driving control part(20) provides a pull-up voltage and a pull-down voltage to the sense amplifier, and provides a first voltage for the pull-down driving including a normal pull-down voltage and an under-drive voltage with the pull-down voltage.
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