| 摘要 |
<p>Disclosed is a method for forming a pattern, wherein both photoresist and antireflection film have a rectangular shape, in a lithography process of semiconductor device production by using an antireflection film which is developable by a photoresist developer liquid. Specifically disclosed is a method for forming a photoresist pattern comprising a step for forming a first antireflection film which is soluble in a photoresist developer liquid; a step for forming, on the first antireflection film, a second antireflection film which is soluble in the photoresist developer liquid and whose dissolving rate in the photoresist developer liquid is lower than that of the first antireflection film; a step for forming a photoresist on the second antireflection film; a step for exposing a semiconductor substrate which is covered with the first antireflection film, the second antireflection film and the photoresist; and a step for developing by using the photoresist developer liquid.</p> |
