THIN FILM TRANSISTOR ARRAY SUBSTRATE

摘要

A thin film transistor array substrate is provided to allow a bad diode to be separated using a laser cutting so that other electrostatic dispersion diodes may be normally operated. A this film transistor array substrate has an electrostatic dispersion line(26), a plurality of data lines(62), a first diode gate electrode(261), a first diode source electrode(651) and a first diode drain electrode(661). The electrostatic dispersion line is formed to be in parallel to a gate line. The date lines are formed to be intersected with the electrostatic dispersion line. The first diode gate electrode is separated from the electrostatic dispersion line, and electrically connected through a first connection member(801). The first diode source electrode is branched from the data line, and overlapped to the first diode gate electrode. The first diode drain electrode is spaced apart from the first diode source electrode, and electrically connected through a second connection member(802) to the electrostatic dispersion line.