USE OF CL2 AND/OR HCL DURING SILICON EPITAXIAL FILM FORMATION

摘要

In a first aspect, a first method of forming an epitaxial film on a substrate is provided. The first method includes (a) providing a substrate; (b) exposing the substrate to at least a silicon source so as to form an epitaxial film on at least a portion of the substrate; and (c) exposing the substrate to HC1 and C12 so as to etch the epitaxial film and other films formed during step (b). Numerous other aspects are provided.