| 摘要 |
To realize a plasma doping method which can control a dosage precisely to improve an in-plane homogeneity of the dosage. The plasma doping method is based on such a discovery, while noting the result, that the dosage of boron is substantially constant for a time period, if a silicon substrate is irradiated with a B2H6/He plasma and is biased, and that the saturation time period is longer and stabler than that, for which the repetitions of an apparatus control can be retained. When the plasma irradiation is started, the dosage increases at first, but then continues to be substantially constant independently of the time change. The dosage then decreases if the time is elongated. If this time period, for which the dosage is substantially constant independently of the time change, is employed as a process window, the dosage can be precisely controlled.
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