| 摘要 |
A method for forming a thin film structure, a thin film structure, a vibrating sensor, a pressure sensor, and an acceleration sensor are provided to manufacture a thin film structure having small tensile stress due to controlled mechanical stress by conducting a lower layer through thermal diffusion of impurity doped on the lower layer. A lower layer(35) made of a poly silicon thin film is formed on a substrate(32). Impurity is doped on the lower layer and then thermally-diffused, thereby conducting the lower layer. An upper layer(36) is formed over the lower layer. The upper layer has tensile stress approximately identical to that of the lower layer. The upper layer is not conducted and made of a poly silicon layer. A defect preventing layer is formed on an upper surface of the lower layer before the impurity is thermally-diffused after doping the impurity on the lower layer. A thin film structure is comprised of the lower layer and the upper layer.
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