HIGH-POWER OPTICALLY END-PUMPED EXTERNAL-CAVITY SEMICONDUCTOR LASER

摘要

A high-power optically end-pumped external-cavity semiconductor laser is provided to simplify manufacturing processes and reduce the whole size by arranging a pump light source laser in a line with other parts at a rear part of a laser chip and removing a collimating lens. A high-power optically end-pumped external-cavity semiconductor laser includes a laser chip(30), an external mirror(60), an SHG(Second Harmonic Generation) crystal(40), and a microlens integrated heat sink(20). The laser chip(30) has an active layer(34) and a distributed bragg reflecting layer(32), and generates a dominant wavelength. The external mirror(60) is located by being separated from one surface of the laser chip(30) by a predetermined distance, and forms the distributed bragg reflecting layer(32) and a resonator(70). The SHG crystal(40) is placed between the external mirror(60) and the laser chip(30). The microlens integrated heat sink(20) emits heat generated from the laser chip(30), and is attached to the other surface of the laser chip(30) so as to collect pumping light inputted to the other surface of the laser chip(30).