发明名称 |
FILM-FORMING METHOD AND APPARATUS USING PLASMA CVD |
摘要 |
A film-forming method wherein a certain thin film is formed on a substrate to be processed (W) using plasma CVD comprises first and second steps performed alternately at least once. In the first step, a first plasma is generated in a process chamber (51) in which the substrate (W) is housed while supplying a compound gas containing a component for the thin film and a reducing gas into the process chamber (51). In the second step following the first step, a second plasma is generated in the process chamber (51) while supplying the reducing gas into the process chamber (51).
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申请公布号 |
KR20070087084(A) |
申请公布日期 |
2007.08.27 |
申请号 |
KR20077016175 |
申请日期 |
2007.07.13 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
TADA KUNIHIRO;YOKOI HIROAKI;WAKABAYASHI SATOSHI;NARUSHIMA KENSAKU |
分类号 |
C23C16/14;C23C16/455;C23C16/34;C23C16/44;C23C16/50;H01L21/205;H01L21/28;H01L21/285 |
主分类号 |
C23C16/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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