| 摘要 |
<p>A semiconductor device includes an inversion gate for electrically connecting an inversion layer to a global bit line by forming the inversion layer, which is to be a local bit line, on a semiconductor substrate, and a memory cell which uses the inversion layer as a source and drain. Thus, since the inversion gate can be operated as a sector transistor, there is no need for providing an extra sector transistor. Since an area for the sector transistor can be reduced, increase of a circuit area can be suppressed. Further, at the time of erasing, electrons injected to the memory cell may be extracted to the semiconductor substrate side by using FN tunnel effects. At the time of erasing, the electrons injected to the memory cell may be extracted to a word line side by using the FN tunnel effects. At the time of erasing, the electrons injected to the memory cell may be extracted from the inversion gate by using the FN tunnel effects.</p> |
