发明名称 |
METHOD FOR FORMING A PHOTORESIST PATTERN |
摘要 |
<p>A method for forming a photoresist pattern includes placing a semiconductor wafer having condensable species in a chemically filtered photolithography system and desorbing the chemical species from the semiconductor wafer in the chemically filtered photolithography system. After desorbing the chemical species, photoresist is applied to the semiconductor wafer in the chemically filtered photolithography system. Next, the photoresist is exposed to energy to form a photoresist pattern in the chemically filtered photolithography system.</p> |
申请公布号 |
KR20070085540(A) |
申请公布日期 |
2007.08.27 |
申请号 |
KR20077012129 |
申请日期 |
2007.05.29 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
SMITH CHRISTOPHER J.;HUES STEVEN M.;HAWK CASSANDRA M. JORDAN;KROLL AMANDA M.;NAGY ANDREW G.;WINEBARGER PAUL M. |
分类号 |
H01L21/027;H01L21/302 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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