NITRIDE SEMICONDUCTOR DEVICE

摘要

A nitride semiconductor light-emitting device having a small leakage current and a high electrostatic breakdown voltage. The nitride semiconductor device comprises an active layer of a nitride semiconductor between p-side nitride semiconductor layers and n- side nitride semiconductor layers. The p-side layers include a p-type contact layer serving as a layer where a p-ohmic electrode is formed. The p-type contact layer is composed of alternation of a p-type nitride semiconductor layer and an n-type nitride semiconductor layer.