发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
<p>A nonvolatile memory has a problem in that applied voltage is high. This is because a carrier needs to be injected into a floating gate through an insulating film by a tunneling effect. In addition, there is concern about deterioration of the insulating film by performing such carrier injection. An object of the present invention is to provide a memory in which applied voltage is lowered and deterioration of an insulating film is prevented. One feature is to use a layer in which an inorganic compound having a charge-transfer complex is mixed with an organic compound as a layer functioning as a floating gate of a memory. A specific example is an element having a transistor structure where a layer in which an inorganic compound having a charge-transfer complex is mixed with an organic compound and which is sandwiched between insulating layers is used as a floating gate.</p> |
申请公布号 |
KR20070087024(A) |
申请公布日期 |
2007.08.27 |
申请号 |
KR20077015830 |
申请日期 |
2005.12.08 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY K.K. |
发明人 |
FURUKAWA SHINOBU;IMAHAYASHI RYOTA |
分类号 |
H01L27/115 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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